Product attributes
TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Transistors – FETs, MOSFETs – single
manufacturer STMicroelectronics
series PowerMESH™
wrap Pipe fittings
Product status Production
FET type N-channel
technology MOSFETs (metal oxides)
Drain-to-source voltage (Vdss) 1000 V
Current at 25°C – Continuous Drain (ID) 3.8A（Tc）
Drive voltage (max. rds on, min. rds on) 10V
On-resistance (max) with different IDs, Vgs 4.4 ohms @ 2A, 10V
Vgs(th) at different IDs (maximum) 5V @ 250µA
Gate charge (Qg) at different Vgs (max) 45 nC @ 10 V
Vgs (max) ±30V
Input capacitance (CISS) at different VDS (max) 1400 pF @ 25 V
