Discrete semiconductor products
Single FET, MOSFET
manufacturer STMicroelectronics
series DeepGATE™, STripFET™ VI
wrap Pipe fittings
Product status Production
FET type P-channel
technology MOSFETs (Metal Oxides)
Drain-to-source voltage (Vdss) 60 V
Current at 25°C – Continuous Drain (Id) 10A（Tc）
Drive voltage (maximum RDS On, minimum RDS On) 10V
On-resistance at different Id, Vgs (max.) 160 mOhm @ 5A, 10V
Vgs(th) at different IDs (maximum) 4V @ 250µA
Gate charge (Qg) at different Vgs (max) 6.4 nC @ 10 V
Vgs (maximum) ±20V
Input capacitance (CIS) at different VDS (max) 340 pF @ 48 V
FET functionality -
Power dissipation (max) 30W（Tc）
Operating temperature 175°C（TJ）
Installation type Through holes
