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New original Integrated Circuits STW58N65DM2AG

Short Description:

Boyad part number 497-16137-5-ND
manufacturer STMicroelectronics
Manufacturer product number STW58N65DM2AG
description MOSFET N-CH 650V 48A TO247
Detailed description Through-hole N channel 650 V 48A(Tc) 360W(Tc) TO-247-3
Customer internal part number
Datasheet  Datasheet


Product Detail

Product Tags

Product attributes

TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Single FET, MOSFET
manufacturer STMicroelectronics
series Automotive, AEC-Q101, MDmesh™ DM2
wrap Pipe fittings
Product Status Sale
FET type N channels
technology MOSFETs (Metal Oxides)
Drain-to-source voltage (Vdss) 650 V
Current at 25°C – Continuous Drain (Id) 48A(Tc)
Drive voltage (maximum RDS On, minimum RDS On) 10V
On-resistance at different Id, Vgs (max.) 65 mOhm @ 24A, 10V
Vgs(th) at different IDs (maximum) 5V @ 250µA
Gate charge (Qg) at different Vgs (max) 88 nC @ 10 V
Vgs (maximum) ±25V
Input capacitance (CIS) at different VDS (max) 4100 pF @ 100 V


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