Product attributes
TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Single FET, MOSFET
manufacturer STMicroelectronics
series PowerMESH™
wrap Pipe fittings
Product Status Production
FET type N channels
technology MOSFETs (Metal Oxides)
Drain-to-source voltage (Vdss) 200 V
Current at 25°C – Continuous Drain (Id) 34A（Tc）
Drive voltage (maximum RDS On, minimum RDS On) 10V
On-resistance at different Id, Vgs (max.) 75 mOhm @ 17A, 10V
Vgs(th) at different IDs (maximum) 5V @ 250µA
Gate charge (Qg) at different Vgs (max) 80 nC @ 10 V
Vgs (maximum) ±30V
Input capacitance (CIS) at different VDS (max) 3300 pF @ 25 V
