Discrete semiconductor products
Transistors – FETs, MOSFETs – single
manufacturer STMicroelectronics
series SuperMESH™
wrap Pipe fittings
Product status Sale
FET type N-channel
technology MOSFETs (metal oxides)
Drain-to-source voltage (Vdss) 900 V
Current at 25°C – Continuous Drain (ID) 11A（Tc）
Drive voltage (max. rds on, min. rds on) 10V
On-resistance (max) with different IDs, Vgs 880 mOhm @ 5.5A, 10V
Vgs(th) at different IDs (maximum) 4.5V @ 100µA
Gate charge (Qg) at different Vgs (max) 152 nC @ 10 V
Vgs (max) ±30V
Input capacitance (CISS) at different VDS (max) 3500 pF @ 25 V
FET function -
Power Dissipation (Max) 230W（Tc）
Operating temperature -55°C ~ 150°C（TJ）
