Product attributes
TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Transistors – FETs, MOSFETs – single
manufacturer STMicroelectronics
series SuperMESH™
wrap Shear band (CT)
With box (TB)
Product status Sale
FET type N-channel
technology MOSFETs (metal oxides)
Drain-to-source voltage (Vdss) 600 V
Current at 25°C – Continuous Drain (ID) 400mA（Tc）
Drive voltage (max. rds on, min. rds on) 10V
On-resistance (max) with different IDs, Vgs 8.5 ohms @ 500mA, 10V
Vgs(th) at different IDs (maximum) 3.7V @ 250µA
Gate charge (Qg) at different Vgs (max) 10 nC @ 10 V
Vgs (max) ±30V