Discrete semiconductor products
Single FET, MOSFET
manufacturer STMicroelectronics
series SuperMESH™
wrap Pipe fittings
Product status Sale
FET type N channels
technology MOSFETs (Metal Oxides)
Drain-to-source voltage (Vdss) 900 V
Current at 25°C – Continuous Drain (Id) 5.8A（Tc）
Drive voltage (maximum RDS On, minimum RDS On) 10V
On-resistance at different Id, Vgs (max.) 2 ohms @ 2.9A, 10V
Vgs(th) at different IDs (maximum) 4.5V @ 100µA
Gate charge (Qg) at different Vgs (max) 60.5 nC @ 10 V
Vgs (maximum) ±30V
Input capacitance (CIS) at different VDS (max) 1350 pF @ 25 V
FET functionality -
Power dissipation (max) 30W（Tc）
