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New original Integrated Circuits STP10N65K3

Short Description:

Boyad part number STP10N65K3-ND
manufacturer STMicroelectronics
Manufacturer product number STP10N65K3
description MOSFET N-CH 650V 10A TO220
Detailed description Through hole N channel 650 V 10A(Tc) 150W(Tc) TO-220
Customer internal part number
Datasheet  Datasheet


Product Detail

Product Tags

Product attributes

TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Single FET, MOSFET
manufacturer STMicroelectronics
series -
wrap Pipe fittings
Product Status Production
FET type N channels
technology MOSFETs (Metal Oxides)
Drain-to-source voltage (Vdss) 650 V
Current at 25°C – Continuous Drain (Id) 10A(Tc)
Drive voltage (maximum RDS On, minimum RDS On) 10V
On-resistance at different Id, Vgs (max.) 1 ohm @ 3.6A, 10V
Vgs(th) at different IDs (maximum) 4.5V @ 100µA
Gate charge (Qg) at different Vgs (max) 42 nC @ 10 V
Vgs (maximum) ±30V
Input capacitance (CIS) at different VDS (max) 1180 pF @ 25 V


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