Product attributes
TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Single FET, MOSFET
manufacturer STMicroelectronics
series SuperMESH™
wrap Pipe fittings
Product status Production
FET type N-channel
technology MOSFETs (metal oxides)
Drain-to-source voltage (Vdss) 520 V
Current at 25°C – Continuous Drain (ID) 4.4A（Tc）
Drive voltage (max. rds on, min. rds on) 10V
On-resistance (max) with different IDs, Vgs 1.5 ohms @ 2.2A, 10V
Vgs(th) at different IDs (maximum) 4.5V @ 50µA
Gate charge (Qg) at different Vgs (max) 16.9 nC @ 10 V
Vgs (max) ±30V
Input capacitance (CISS) at different VDS (max) 529 pF @ 25 V