Product attributes
TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Single FET, MOSFET
manufacturer STMicroelectronics
series -
wrap Pipe fittings
Product status Sale
FET type N channels
technology SiCFET (silicon carbide)
Drain-to-source voltage (Vdss) 1200 V
Current at 25°C – Continuous Drain (Id) 20A（Tc）
Drive voltage (maximum RDS On, minimum RDS On) 501
On-resistance at different Id, Vgs (max.) 290 mOhms @ 10A, 20V
Vgs(th) at different IDs (maximum) 3.5V @ 1mA
Gate charge (Qg) at different Vgs (max) 45 nC @ 20 V
Vgs (maximum) +25V，-10V