Product attributes
TYPE DESCRIPTION CHOOSE
category Discrete semiconductor products
Transistor – Bipolar Transistor (BJT) – Single
manufacturer onsemi
series -
wrap tray
Product status Production
Transistor type PNP
Current – Collector (IC) (Max) 25 A
Voltage – collector breakdown (max) 80 V
VCE saturation pressure drop (max) with different Ib and ICs 4V @ 6.25A,25A
Current – Collector Cutoff (Max) 2mA
DC current gain (hFE) with different ICs, Vces (min) 20 @ 10A,4V
Power – Maximum 200 W
Frequency – Transition 4MHz
Operating temperature -65°C ~ 200°C(TJ)