product properties
TYPE
DESCRIBE
category
Discrete Semiconductor Products
Transistor – FET, MOSFET – Single
manufacturer
Infineon Technologies
series
CoolGaN™
Package
Tape and Reel (TR)
Shear Band (CT)
Digi-Reel® Custom Reel
Product Status
discontinued
FET type
N channel
technology
GaNFET (Gallium Nitride)
Drain-Source Voltage (Vdss)
600V
Current at 25°C – Continuous Drain (Id)
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
On-resistance (max) at different Id, Vgs
-
Vgs(th) (maximum) at different Ids
1,6V @ 2,6mA
Vgs (max)
-10V
Input capacitance (Ciss) at different Vds (max)
380pF @ 400V
FET function
-
Power dissipation (max)
125W (Tc)
operating temperature
-55°C ~ 150°C (TJ)
installation type
Surface Mount Type
Supplier Device Packaging
PG-DSO-20-87
Package/Enclosure
20-PowerSOIC (0.433″, 11.00mm wide)
Basic product number
IGOT60
Media and Downloads
RESOURCE TYPE
LINK
Specifications
IGOT60R070D1
GaN Selection Guide
CoolGaN™ 600 V e-mode GaN HEMTs Brief
Other related documents
GaN in Adapters/Chargers
GaN in Server and Telecom
Realiability and Qualification of CoolGaN
Why CoolGaN
GaN in Wireless Charging
video file
CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™
CoolGaN™ – the new power paradigm
2500 W full-bridge totem pole PFC evaluation board using CoolGaN™ 600 V
HTML Specifications
CoolGaN™ 600 V e-mode GaN HEMTs Brief
IGOT60R070D1
Environment and Export Classification
ATTRIBUTES
DESCRIBE
RoHS status
Compliant with ROHS3 specification
Moisture Sensitivity Level (MSL)
3 (168 hours)
REACH status
Non-REACH products
ECCN
EAR99
HTSUS
8541.29.0095
